Semiconductor device, method of fabricating the same, and electronic apparatus

ABSTRACT

A method of making semiconductor devices comprising the steps of: preparing non-defective individual film packages having good quality, wherein leads are formed and a semiconductor chip is mounted on each of the film packages; attaching each of the non-defective individual packages to each of mounting portions of a plate; and cutting the plate into separate pieces, each of the separated pieces corresponding to each of the mounting portions on which each of the non-defective individual film packages is mounted.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device, a method forfabricating the same, and an electronic apparatus.

2. Description of Related Art

In the microminiaturization of semiconductor devices, a bare chipmounting arrangement is regarded as an ideal form of assembly. However,since quality assurance and the handling of a bare chip are difficult inpractice, the chip is assembled in a package during semiconductor devicefabrication. As one of the package forms meeting the need for high pincounts, a ball grid array (BGA) type package has been developedrecently. On a substrate of the BGA type package, external terminalbumps are arranged in an area array to permit surface mounting.

As one kind of BGA type package, a tape ball grid array (T-BGA) packagein which a flexible substrate (film carrier tape) is used as a base infabrication with a tape automated bonding (TAB) technique has been used.Using the advantageous features of the film carrier tape, a T-BGApackaging technique can provide fine-pitch, high-pin-count semiconductordevices.

Since the film carrier tape is liable to warp due to lack of rigidity,however, attaching a reinforcing sheet (stiffener) is required. In theprocess of semiconductor device fabrication, a stiffener is attached toan individual piece of film carrier tape punched out after eachsemiconductor chip is mounted on the film carrier tape. Moreparticularly, the film carrier tape is punched out into separate pieces,the pieces are inspected, and then the stiffener is attached only to thenon-defective pieces with good quality. In this manner, productionyields can be increased since defective pieces of film are rejectedprior to attaining the finished product.

After this process, individual pieces of film must be handled insubsequent steps such as bump formation, resulting in trouble infabrication.

It is therefore an object of the present invention to obviate theabove-mentioned drawback by providing a method of fabrication T-BGApackages which are suitable for mass-production and easy to handle, asemiconductor device fabricated by this method, and an electronicapparatus containing the semiconductor device thus fabricated.

SUMMARY OF THE INVENTION

(1) According to a first aspect of the present invention, there isprovided a method of making semiconductor devices, comprising the stepsof:

preparing non-defective individual film packages having good quality,wherein each of the non-defective individual film packages has aflexible substrate on which a wiring pattern is formed and asemiconductor chip having electrodes that are connected to the wiringpattern;

attaching each of the non-defective individual film packages to each ofmounting regions of a reinforcing member; and

cutting the reinforcing member into separate pieces, each of theseparated pieces corresponding to each of the mounting regions on whicheach of the non-defective individual film packages is mounted.

In this method, the reinforcing member represents any part serving toprevent a film carrier type from warping or bowing (to ensureplanarity). As a reinforcing member, a so-called stiffener is often usedin the semiconductor device fabrication.

A plurality of mounting regions are provided on the reinforcing memberand an individual film package is attached to each of them. Since aplurality of individual film packages forming a plurality ofsemiconductor devices are integrated with the reinforcing member, thesubsequent steps can be carried out on a mass-production line.

Further, where each individual film package is accurately attached toeach mounting region of the reinforcing member, a relative positionalrelation between the reinforcing member and the individual film packagesis fixed, thus improving the positional accuracy.

Furthermore, the semiconductor chips are mounted on only non-defectiveindividual film packages having good quality. Therefore, in thesubsequent steps after the non-defective individual film packages withgood quality are selected (more specifically in the subsequent stepsafter the non-defective individual film packages are attached to thereinforcing member), production yields can be increased substantially.

(2) The method of making semiconductor devices of the present inventionmay further comprise, before the non-defective individual film packagesare prepared, the steps of:

mounting the semiconductor chip on each of predetermined areas in a filmcarrier tape having the wiring pattern formed on each of thepredetermined areas,

punching out the film carrier tape into individual film packages, and

selecting the non-defective individual film packages having good qualityfrom the individual film packages through inspection.

Since the TAB process is applied to this method, an existing TAB processproduction line may be used and the advantageous features of the TABprocess can be utilized.

The method of making semiconductor devices may further comprise a stepof molding a region including a connecting portion between thesemiconductor chip and the film carrier tape with a resin.

(3) In the method of making semiconductor devices of the presentinvention, after each of the non-defective individual film packages isattached to each of the mounting regions of the reinforcing member, thesubsequent steps may be carried out on a production line for plasticball grid assay (P-BGA) type packages.

On the P-BGA package production line, such processes as marking, ball(bump) formation, cleaning, separation into product pieces andappearance inspection can be carried out.

The P-BGA package is fabricated on the base of a printed circuit board.A plurality of semiconductor chips are mounted on the printed circuitboard, and then the printed circuit board is punched out into separateproduct pieces, each of which corresponds to each semiconductor chip.

The method of the present invention can utilize the P-BGA packageproduction line by using the reinforcing member having a plurality ofindividual film packages attached thereon in lieu of the printed circuitboard. Thus, when an existing production line for P-BGA packages isavailable, no investment in new facilities is required thereby reducingmanufacturing cost.

(4) The method of making semiconductor devices of the present inventionmay further comprise the step of forming external electrodes on thewiring pattern, after the step of attaching each of the non-defectiveindividual film packages to each of the mounting regions of thereinforcing member, and before the step of cutting the reinforcingmember.

Before the reinforcing member is cut into pieces, the plurality ofnon-defective individual film packages are attached thereon. Sinceexternal electrodes are formed in this time, the external electrodes canbe formed on the plurality of non-defective individual film packagessimultaneously or in succession, thus reducing fabrication time.

(5) In the method of making semiconductor devices of the presentinvention, a slot may be formed along a cutting line for the reinforcingmember so as to enclose each of the mounting regions that is supportedonly by at least one supporting portion; and the step of cutting thereinforcing member may be carried out by cutting the supporting portion.

Since only the supporting portion is cut, a reinforcing member made of arigid material could be easily cut. Further, deformation of the mountingregion of the reinforcing member can be prevented to ensure planarity ofthe individual film packages attached thereon.

(6) The method of making semiconductor devices of the present inventionmay further comprise, after the step of attaching each of thenon-defective individual film packages to each of the mounting regionsof the reinforcing member, and before the step of cutting thereinforcing member, the step of attaching a heat spreading member to aregion including the semiconductor chip.

The heat spreading member is used to efficiently dissipate heat from thesemiconductor chip and it is attached to the semiconductor chip asrequired depending on the amount of heat to be produced. Before thereinforcing member is cut into separate pieces, a plurality ofsemiconductor chips are attached thereon. It is therefore possible toattach a plurality of heat spreading members to the semiconductor chipssimultaneously.

(7) In the method of making semiconductor devices of the presentinvention, an edge portion of the heat spreading member may be disposedinside the cutting line for the reinforcing member; and in the step ofcutting the reinforcing member, both sides of the reinforcing member maybe clamped by a pair of holding members at the position that is outsidethe heat spreading member and inside the cutting line for thereinforcing member, enabling the shear force to be applied to thereinforcing member to be cut at the position that is outside the holdingmembers.

Since the vicinity of the cutting line for the reinforcing member shieldby the holding members, the reinforcing member can be prevented frombeing distorted at the cutting. Therefore, the planarity of theindividual film packages can be ensured, resulting in satisfactorymounting of external electrodes.

(8) In the method of making semiconductor devices of the presentinvention, when a slot is formed along a cutting line for thereinforcing member so as to enclose each of the mounting regions that issupported only by at least one supporting portion,

an outline of the heat spreading member may be approximately alignedwith an edge of the slot on the side of each of the mounting regions,the heat spreading member being disposed inside a connecting portion ineach of the mounting regions connecting with the supporting portion; and

in the step of cutting the reinforcing member, both sides of thereinforcing member may be clamped by a pair of holding members at theposition that is outside the heat spreading member and inside a cuttingline for the supporting portion, enabling the shear force to be appliedto the supporting portion at the position that is outside the holdingmembers.

Since the vicinity of the cutting line for the supporting portion of thereinforcing member is held by the holding members, the reinforcingmember can be prevented from being distorted at the cutting.

(9) In the method of making semiconductor devices of the presentinvention, when a slot is formed along a cutting line for thereinforcing member so as to enclose each of the mounting regions that issupported only by at least one supporting portion,

the heat spreading member may be superposed on the reinforcing memberand have a planar configuration to cover the slot, each of the mountingregions, and the supporting portion of the reinforcing member; and theheat spreading member may be cut together with the reinforcing member.

A plurality of semiconductor chips are mounted on the reinforcingmember. By superposing the heat spreading member having a planarconfiguration on the reinforcing member, the heat spreading members canbe attached to a plurality of semiconductor chips simultaneously. Thus,the time required for aligning and attaching the heat spreading membercan be reduced.

(10) In the method of making semiconductor devices of the presentinvention, the heat spreading member and the reinforcing member may beprovided with convex and concave portions to the engaged mutually. Theheat spreading member and the reinforcing member can be thus alignedwith ease.

(11) According to a second aspect of the present invention, there isprovided a semiconductor device fabricated by using the abovementionedmethod.

(12) According to a third aspect of the present invention, there isprovided a circuit board on which is mounted the abovementionedsemiconductor device.

(13) According to a fourth aspect of the present invention, there isprovided an electronic apparatus including the abovementioned circuitboard.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1C are explanatory diagrams illustrating the semiconductordevice fabrication processes according to the embodiment of the presentinvention;

FIG. 2 is a diagram showing a film carrier tape in the embodiment of thepresent invention;

FIG. 3 is a diagram showing the insulating film punched out from thefilm carrier tape;

FIG. 4 is a diagram showing a reinforcing member in the embodiment ofthe present invention;

FIG. 5 is a diagram showing the reinforcing member on which theinsulating film is attached;

FIG. 6 is a diagram showing the reinforcing member on which a heatspreading member is attached;

FIG. 7 is a diagram showing a step of cutting the reinforcing member;

FIG. 8 is a diagram showing the embodiment of a semiconductor deviceaccording to the present invention;

FIG. 9 is a diagram showing a modification of the embodiment of thepresent invention;

FIG. 10 is a diagram showing the embodiment of a circuit board accordingto the present invention; and

FIG. 11 is a diagram showing an electronic apparatus containing thecircuit board on which is mounted the semiconductor device fabricatedaccording to the method of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The present invention will now be described in detail by way of examplewith reference to the accompanying drawings.

FIGS. 1A to 7 are explanatory diagrams illustrating semiconductor devicefabrication processes in the embodiment of the present invention, andFIG. 8 shows a finished semiconductor device according to the embodimentof the present invention.

As shown in FIG. 8, a BGA package is applied to a semiconductor device10. In this figure, the semiconductor device 10 comprises an insulatingfilm 12, a plurality of leads 20 formed on the insulating film 12, abumps 14 formed on each of the leads 20, and a semiconductor chip 16.Surface mounting can be implemented by using the plurality of the bumps14. The bump 14 is used as an external electrode.

The insulating film 12 is obtained by punching out a long film carriertape 30 shown in FIGS. 1A to 2, and the insulating film 12 is formed tobe larger than the semiconductor chip 16. A device hole 24 is formed onthe insulating film 12.

An end 20a of the lead 20 protrudes into the device hole 24, and the end20a is connected to an electrode 18 of the semiconductor chip 16. Moreparticularly, the semiconductor chip 16 is disposed so that theelectrode 18 thereof is positioned inside the device hole 24 and on theside opposite to the lead-20 forming side of the insulating film 12,whereby the end 20a of the lead 20 is bonded to the electrode 18.

The lead 20 connects the electrode 18 of the semiconductor chip 16 to aland 21 (see FIG. 2). The land 21 is provided with the bump 14. Eachbump 14 is made of a material such as solder, for example, and the endthereof has a ball-like shape. Copper or the like may be used in lieu ofsolder as the material for the bump 14.

Solder resist 22 is applied onto the lead-20 forming side of theinsulating film 12, while circumventing the bumps 14. The surface of thelead 20 is thus covered with the solder resist 22 for protection.

A stiffener 28 having a plate-like shape is attached to the insulatingfilm 12 on the side opposite to the bumps 14. The stiffener 28 is madeof copper, stainless steel, copper alloy or the like, and is strongenough to maintain a planar configuration. The stiffener 28 is attachedto the insulating film 12 by means of an insulating adhesive 29. Theinsulating adhesive 29 is applied in the form of a thermosetting orthermoplastic film. Circumventing the semiconductor chip 16, thestiffener 28 is attached to the entire surface of the insulating film12. Thus, the stiffener 28 prevents the insulating film 12 from beingdistorted or warped. This ensures uniformity in the height of the bumps14 to improve planarity thereof, leading to an enhancement of yield inthe mounting of semiconductor devices on circuit boards.

Further, a heat spreader 27 is bonded to the semiconductor chip 16 onthe side opposite to the surface-mounted side via a thermally conductiveadhesive 25 such as silver paste. Thus, heat from the semiconductor chip16 can be efficiently dissipated. The heat spreader 27 is formed to belarger in size than the semiconductor chip 16 and can be bonded to thestiffener 28. Between the stiffener 28 and the heat spreader 27, thethermally conductive adhesive 25 is provided for hermetic bonding.Depending on the amount of heat produced by the semiconductor chip 16,an ordinary insulating adhesive or the insulating film mentioned abovemay be used in lieu of the thermally conductive adhesive 25.

The interstices between the semiconductor chip 16 and the insulatingfilm 12 are sealed by potting of epoxy resin 26. The epoxy resin 26 isalso applied to the device hole 24 and the periphery of semiconductorchip 16.

The embodiment of the semiconductor device of the present invention hasa configuration as described above, and the method of fabricating suchsemiconductor device is now described below.

TAB Process

First, as shown in FIGS. 1A to 1C, the semiconductor chip 16 is mountedon the film carrier tape 30, the potting with epoxy resin 26 isperformed, and the film carrier tape 30 is punched out into separatepieces of insulating film 12 in the TAB process.

More particularly, the semiconductor chip 16 is mounted on the filmcarrier tape 30 as shown in FIG. 1A. An enlarged view of the filmcarrier tape 30 is shown in FIG. 2.

The film carrier tape 30 is made of a material such as polyimide resin.On the film carrier tape 30, device holes 24 are formed, and a pluralityof leads 20 and a plurality of lands 21 are arranged outside it.

More specifically, on the film carrier tape 30, a plurality of deviceholes 24 are formed, and a plurality of leads 20 and a plurality oflands 21 are provided outside each device hole 24. In this figure, someof the leads 20 and lands 21 are indicated while others are omitted.

The land 21 is connected to a plating lead 32 through a region of thelead 20 extending in a direction away from the device hole 24. All theleads 20, including those not shown in this figure, are connected to theplating lead 32. By using the plating lead 32, all of the leads 20 andlands 21 are electroplate. The leads 20 and lands 21 may be plated by anelectroless plating technique. In this case, it is not necessary toprovide the plating lead 32.

The film carrier tape 30 mentioned above is wound on a reel 33 as shownin FIG. 1A. The end of the film carrier tape 30 is rolled out, and thenrolled up by a take-up reel 35. By using a bonding jig 31, thesemiconductor chip 16 is bonded to the film carrier tape 30 between thereels 33 and 35. For this bonding process, either single-point bondingor gang bonding may be employed. With the gang bonding, the ends 20a ofall the leads 20 can be bonded to the electrodes 18 of eachsemiconductor chip 16 simultaneously.

A plurality of semiconductor chips 16 are thus mounted on the filmcarrier tape 30 successively, and then the reel 35 takes up the filmcarrier tape 30 having the a plurality of semiconductor chips 16 mountedthereon.

Then, as shown in FIG. 1B, the reel 35 having the film carrier tape 30wound thereon is set on another fabrication equipment. The film carriertape 30 is rolled out and placed between the reels 35 and 37, and theepoxy resin 26 is potted to the film carrier tape 30. Note that FIG. 8shows where the epoxy resin 26 is potted.

Then, after the film carrier tape 30 is taken up by the reel 37, thereel 37 is set on still another fabrication equipment as shown in FIG.1C. The film carrier tape 30 is rolled out and placed between the reels37 and 39. The film carrier tape 30 is then punched out into separatepieces of insulating film 12.

FIG. 3 shows a separate piece of insulating film 12. As shown in thisFigure, the individual insulating film 12 thus punched out has thesemiconductor chip 16 mounted thereon, the semiconductor chip 16 beingsealed with the epoxy resin 26.

After the above-mentioned steps, each insulating film 12 is subjected toinspection for selection of non-defective items with good quality only.These inspections include a chip mounting condition check and anelectrical characteristic test, for example.

Since the above steps can be carried out in conventional TAB process,existing fabrication equipment may be adapted. While the chip mounting,resin potting and punching-out steps are implemented using differentapparatuses for fabrication in the embodiment described above, thesefabrication apparatuses may be combined into one production line.Alternatively, any fabrication equipment capable of carrying out thesemounting, potting and punching steps in succession may be employed. Itis also possible to use any fabrication equipment capable ofsuccessively carrying out the punching-out step and the intermediateprocess described below.

Intermediate Process

The plate 40 shown in FIG. 4 is prepared. In a later step, the plate 40is punched out into separate pieces, i.e., stiffeners 28 (see in FIG.8).

A plurality of device holes 42 and a plurality of slots 44 are formed onthe plate 40. As shown in FIG. 8, the device hole 42 is formed to have arectangular (square) shape larger then the outline of the semiconductorchip 16 so that the semiconductor chip 16 can be positioned thereinwithout touching the plate.

Each slot 44 is formed on the outside of the four sides of each devicehole 42 and in parallel to one of the four sides thereof. Of theparallel long sides of the slot 44, one long side near the device hole42 becomes one outline side of the stiffener 28. Namely, the slot 44 isformed along a cutting line for punching out the plate 40 intostiffeners 28.

The adjacent slots 44 are not in communication with each other.Therefore, a mounting portion 46 on which the individual insulating film12 is to be attached as shown in FIG. 8 is enclosed by the slots 44 butsustained by supporting portions 48. Each supporting portion 48 islocated on an extended diagonal line of the device hole 42.

The plate 40 configured as mentioned above has a plurality of mountingportions 46 corresponding to a plurality of semiconductor chips 16.

The aforesaid insulating film 12 is then attached to each mountingportion 46 of the plate 40. Only non-defective insulating films 12 withgood quality, each having the semiconductor chip 16 mounted thereon, areallowed to be attached. Therefore, production yields can be increased inthe subsequent steps.

FIG. 5 shows the plate 40 on which the insulating film 12 is attached.In this Figure, the insulating film 12 is attached on the plate 40 withthe semiconductor-chip-16-mounting side facing down. The semiconductorchip 16 is positioned inside the device hole 42 of the plate 40.Therefore, the lands 21 and the leads (not shown) are exposed on theside opposite to the plate 40 (front side in the Figure).

The insulating film 12 is bonded to the plate 40 via the insulatingadhesive 29 indicated in FIG. 8. The insulating adhesive 29 may beprepared in a thermosetting or thermoplastic film form and previouslyattached to the plate 40. Thus, the plate 40 can bethermocompression-bonded to the insulating film 12 on the side where thesemiconductor chip 16 protrudes.

As shown in FIG. 5, the insulating film 12 slightly extends from themounting portion 46 into the slot 44, so that positioning for formationof bumps 14 and other processes can be made by using the outline of theinsulating film 12 as a guide.

Then, as shown in FIG. 6, the individual heat spreader 27 is attachedfor each semiconductor chip 16 (not illustrated). More specifically, asshown in FIG. 8, the heat spreader 27 is bonded to cover thesemiconductor chip 16 on the side opposite to the electrodes 18 and themounting portion 46 of the plate 40 (stiffener 28). For this bonding,the thermally conductive adhesive 25 is used. The thermally conductiveadhesive 25 may be in paste or tape form. When the thermally conductiveadhesive 25 in tape form is used, it may be previously attached to theheat spreader 27. In case that the amount of heat produced by thesemiconductor chip 16 is relatively small, an insulating adhesive may beused instead of the thermally conductive adhesive.

As shown in FIG. 6, the heat spreader 27 is configured not to extendinto the slot 44 from the long side. Further, the heat spreader 27 isformed to circumvent a connecting portion 46a in the mounting portion 46of the plate 40 connecting with the supporting portion 48. Namely, theconnecting portion 46a is exposed, not covered with the heat spreader27.

In the description given above, the supporting portion 48 is a part thatis positioned outside the cutting line at which each stiffener 28 isseparated from the plate 40. The connecting portion 46a is a part thatis positioned inside the cutting line for separating the stiffener 28from the plate 40. Therefore, "cutting the supporting portion 48" and"cutting the connecting portion 46a" designate the same process, thatis, separating each stiffener 28 from the plate 40.

Post Process

After completion of the above-mentioned steps, the plate 40 having theinsulating film 12 and heat spreader 27 attached thereon is put on aP-BGA package production line in the post process. By arranging theplate 40 having the insulating film 12 attached thereon to have the sameconfiguration as that of a printed board for convention P-BGA packages,this production line can be utilized.

In the post process, any indication such as a product name is marked onthe heat spreader 27, bumps 14 are formed on the lands 21 disposed onthe insulating film 12, and then the cleaning is carried out. Thesesteps are the same as those in conventional methods.

Then, the plate 40 is cut into separate pieces, i.e., stiffeners 28.FIG. 7 is a cross-sectional view of the plate 40 taken along the lineVII--VII in FIG. 6, showing a process in which each stiffener 28 ispunched out from the plate 40.

As shown in FIG. 7, the plate 40 is held between a pair of holding jigs50 and 52. More specifically, the plate 40, insulating adhesive 29,insulating film 12, lead 20 and solder resist 22 are held between theregaining jigs 50 and 52.

With respect to a planar position of the plate 40, the connectingportion 46a in the mounting portion 46 connecting with the supportingportion 48 is held between the holding jigs 50 and 52, and thesupporting portion 48 is at the position that is outside the holdingjigs 50 and 52. In other words, the plate 40 is held between the holdingjigs 50 and 52 at a position which is outside the heat spreader 27 andinside the cutting line. In this state, by using a cutting punch 54, ashear force is applied to the supporting portion 48 to cut it.

In the present embodiment mentioned above, both sides of the plate 40are held between the holding jigs 50 and 52 at a position inside thecutting line to be disconnected by the cutting punch 54. Therefore, theentire stiffener 28 and the connecting portion 46a thereof are notdeformed at the time of shearing by the cutting punch 54. Thus, theinsulating film 12 is prevented from being distorted or warped, ensuringuniformity in the height of the bumps 14 to improve planarity thereof.This leads to enhancement of yield in the mounting of semiconductordevices on circuit boards.

Since the above steps can be carried out by using the TAB process andP-BGA package production lines, existing fabrication facilities can beutilized.

It is to be understood that the present invention is not limited in itsapplication to the above-mentioned embodiments and various changes andmodifications may be made therein. For example, the aforesaid heatspreader 27 may have the same configuration as that of the plate 40.Thus, both the plate 40 and the heat spreader 27 superposed thereon canbe cut off at the same time. FIG. 9 shows a modified embodiment inconnection with the heat spreader and plate.

In FIG. 9, a plate 60 has the same configuration as that of theaforesaid plate 40 except that convex portions 62 are formed on one sidethereof, and a plurality of mounting portions 64 are provided on theplate 60. A heat spreader 70 also has the same configuration as that ofthe aforesaid plate 40 except that concave portions 72 are formed on oneside thereof, and a plurality of mounting portions 74 are provided onthe heat spreader 70. The concave part 72 formed as a dent may be athrough hole.

The convex part 62 and the concave part 72 are formed to engage eachother, and when these parts are engaged with each other, the plate 60and the heat spreader 70 are stacked in alignment.

Since the convex part 62 and concave part 72 are provided, the heatspreader 70 can be aligned with the plate 60 easily and accurately.Further, a plurality of mounting portions 74 formed on the heat spreader70 can be attached to a plurality of mounting portions 64 formed on theplate 60 simultaneously. Alternatively, the convex portion 62 may beprovided on a jig piece that is used for alignment between the plate 60and the heat spreader 70. In this case, the plate 60 and the heatspreader 70 do not have any convex portions. Instead, a concave portion(a hole or the like) is provided on each of the plate 60 and the heatspreader 70 at a position corresponding to the convex portion of the jigpiece, so that the plate and the heat spreader can be assembled in thesame manner as mentioned above.

Furthermore, the plate 70 previously formed integrally with the heatspreader 70 may be used. More particularly, this arrangement can be madeby providing a plate which has been drawn to have a convex shape at aregion corresponding to the device hole 42. In this case, the height(depth) of drawing is up to a position corresponding to the heatspreader in the structure mentioned above. Thus, the part count can bedecreased to reduce the manufacturing cost.

Further, the present invention is applicable to a front-TAB typesemiconductor device in which the semiconductor chip 16 is mounted onthe same side on which the bumps 14 are formed as well as a back-TABtype semiconductor device in which the semiconductor chip 16 is mountedon the side opposite to the side on which the bumps 14 are formed asshown in FIG. 8. Furthermore, a B-TAB type of insulating film havingintegrally formed bumps on the wiring side may be used instead of theinsulating film 12. Still further, single-port bonding may be carriedout by using a film carrier tape having no bumps.

FIG. 10 shows a circuit board 1000 on which a semiconductor device 1100fabricated according to the present invention is mounted. It is commonpractice to use a circuit board made of organic resin material such asglass epoxy resin, for example. On the circuit board, wiring patternsmade of copper or the like are formed to have desired circuits, and thebumps of the semiconductor device are physically connected with thesewiring patterns to provide electrical conductivity.

FIG. 11 shows a notebook-type personal computer 1200 as an example ofthe electronic apparatus equipped with the circuit board 1000.

In addition, by applying the present invention described above, it isalso possible to fabricate surface-mounting-type electronic components(either active or passive parts) having a plurality of bumps as insemiconductor microcircuit devices, for example, such electroniccomponents as resistors, capacitors, coils, oscillators, filters,temperature sensors, thermistors, varistors, variable resistors, andfuses.

What is claimed is:
 1. A method of making semiconductor devices,comprising the steps of:preparing non-defective individual film packageshaving good quality, wherein each of said non-defective individual filmpackages has a flexible substrate having a front surface on which awiring pattern in formed and a back surface opposite thereof, and asemiconductor chip having electrodes that are connected to said wiringpattern, said flexible substrate being larger than said semiconductorchip; attaching the back surface of each of said non-defectiveindividual film packages to each of mounting regions of a reinforcingmember, said reinforcing member maintaining a planar configuration forsaid flexible substrate and circumventing said semiconductor chip; andcutting said reinforcing member into separate pieces, each of saidseparated pieces corresponding to each of said mounting regions on whicheach of said non-defective individual film packages is mounted.
 2. Themethod of making semiconductor devices as defined in claim 1, furthercomprising, before said non-defective individual film packages areprepared, the steps of:mounting said semiconductor chip on each ofpredetermined areas in a film carrier tape having said wiring patternformed on each of said predetermined areas, punching out said filmcarrier tape into individual film packages, and selecting saidnon-defective individual film packages having good quality from saidindividual film packages through inspection.
 3. The method of makingsemiconductor devices a defined in claim 1,wherein, after each of saidnon-defective individual film packages is attached to each of saidmounting regions of said reinforcing member, the subsequent steps arecarried out on a production line for P-BGA type packages.
 4. The methodof making semiconductor devices as defined in claim 2,wherein, aftereach of said non-defective individual film packages is attached to eachof said mounting regions of said reinforcing member, the subsequentsteps are carried out on a production line for P-BGA type packages. 5.The method of making semiconductor devices as defined in claim 1,afterthe step of attaching each of said non-defective individual filmpackages to each of said mounting regions of said reinforcing member,and before the step of cutting said reinforcing member, furthercomprising the step of forming external electrodes on said wiringpattern.
 6. The method of making semiconductor devices as defined inclaim 2,after the step of attaching each of said non-defectiveindividual film packages to each of said mounting regions of saidreinforcing member, and before the step of cutting said reinforcingmember, further comprising the step of forming external electrodes onsaid wiring pattern.
 7. The method of making semiconductor devices adefined in claim 3,after the step of attaching each of saidnon-defective individual film packages to each of said mounting regionsof said reinforcing member, and before the step of cutting saidreinforcing member, further comprising the step of forming externalelectrodes on said wiring pattern.
 8. The method of making semiconductordevices as defined in claim 1,wherein a slot is formed along a cuttingline for said reinforcing member so as to enclose each of said mountingregions that is supported only by at least one supporting portion; andwherein the step of cutting said reinforcing member is carried out bycutting said supporting portion.
 9. The method of making semiconductordevices as defined in claim 2,wherein a slot is formed along a cuttingline for said reinforcing member so as to enclose each of said mountingregions that is supported only by at least one supporting portion; andwherein the step of cutting said reinforcing member is carried out bycutting said supporting portion.
 10. The method of making semiconductordevices as defined in claim 3,wherein a slot is formed along a cuttingline for said reinforcing member so as to enclose each of said mountingregions that is supported only by at least one supporting portion; andwherein the step of cutting said reinforcing member is carried out bycutting said supporting portion.
 11. The method of making semiconductordevices as defined in claim 4,wherein a slot is formed along a cuttingline for said reinforcing member so as to enclose each of said mountingregions that is supported only by at least one supporting portion; andwherein the step of cutting said reinforcing member is carried out bycutting said supporting portion.
 12. The method of making semiconductordevices as defined in claim 1,after the step of attaching each of saidnon-defective individual film packages to each of said mounting regionsof said reinforcing member, and before the step of cutting saidreinforcing member, further comprising the step of attaching a heatspreading member to a region including said semiconductor chip.
 13. Themethod of making semiconductor devices as defined in claim 2,after thestep of attaching each of said non-defective individual film packages toeach of said mounting regions of said reinforcing member, and before thestep of cutting said reinforcing member, further comprising the step ofattaching a heat spreading member to a region including saidsemiconductor chip.
 14. The method of making semiconductor devices asdefined in claim 3,after the step of attaching each of saidnon-defective individual film packages to each of said mounting regionsof said reinforcing member, and before the step of cutting saidreinforcing member, further comprising the step of attaching a heatspreading member to a region including said semiconductor chip.
 15. Themethod of making semiconductor devices as defined in claim 4,after thestep of attaching each of said non-defective individual film packages toeach of said mounting regions of said reinforcing member, and before thestep of cutting said reinforcing member, further comprsing the step ofattaching a heat spreading member to a region including saidsemiconductor chip.
 16. The method of making semiconductor devices asdefined in claim 8,after the step of attaching each of saidnon-defective individual film packages to each of said mounting regionsof said reinforcing member, and before the step of cutting saidreinforcing member, further comprising the step of attaching a heatspreading member to a region including said semiconductor chip.
 17. Themethod of making semiconductor devices as defined in claim 9,after thestep of attaching said of said non-defective individual film packages toeach of said mounting regions of said reinforcing member, and before thestep of cutting said reinforcing member, further comprising the step ofattaching a heat spreading member to a region including saidsemiconductor chip.
 18. The method of making semiconductor devices asdefined in claim 10,after the step of attaching each of saidnon-defective individual film packages to each of said mounting regionsof said reinforcing member, and before the step of cutting saidreinforcing member, further comprising the step of attaching a heatspreading member to a region including said semiconductor chip.
 19. Themethod of making semiconductor devices as defined in claim 11,after thestep of attaching each of said non-defective individual film packages toeach of said mounting regions of said reinforcing member, and before thestep of cutting said reinforcing member, further comprising the step ofattaching a heat spreading member to a region including saidsemiconductor chip.
 20. The method of making semiconductor devices asdefined in claim 12,wherein an edge portion of said heat spreadingmember is disposed inside said cutting line for said reinforcing member;and wherein in the step of cutting said reinforcing member, both sidesof said reinforcing member are clamped by a pair of holding members atthe position that is outside said heat spreading member and inside saidcutting line for said reinforcing member, enabling the shear force to beapplied to said reinforcing member to be cut at the position that isoutside said holding members.
 21. The method of making semiconductordevices as defined in claim 13,wherein an edge portion of said heatspreading member is disposed inside said cutting line for saidreinforcing member; and wherein in the step of cutting said reinforcingmember, both sides of said reinforcing member are clamped by a pair ofholding members at the position that is outside said heat spreadingmember and inside said cutting line for said reinforcing member,enabling the shear force to be applied to said reinforcing member to becut at the position that is outside said holding members.
 22. The methodof making semiconductor devices as defined in claim 14,wherein an edgeportion of said heat spreading member is disposed inside said cuttingline for said reinforcing member; and wherein in the step of cuttingsaid reinforcing member, both sides of said reinforcing member areclamped by a pair of holding members at the position that is outsidesaid heat spreading member and inside said cutting line for saidreinforcing member, enabling the shear force to be applied to saidreinforcing member to be cut at the position that is outside saidholding members.
 23. The method of making semiconductor devices asdefined in claim 15,wherein an edge portion of said heat spreadingmember is disposed inside said cutting line for said reinforcing member;and wherein in the step of cutting said reinforcing member, both sidesof said reinforcing member are clamped by a pair of holding members atthe position that is outside said heat spreading member and inside saidcutting line for said reinforcing member, enabling the shear force to beapplied to said reinforcing member to be cut at the position that isoutside said holding members.
 24. The method of making semiconductordevices as defined in claim 16,wherein an edge portion of said heatspreading member is disposed inside said cutting line for saidreinforcing member; and wherein in the step of cutting said reinforcingmember, both sides of said reinforcing member are clamped by a pair ofholding members at the position that is outside said heat spreadingmember and inside said cutting line for said reinforcing member,enabling the shear force to be applied to said reinforcing member to becut at the position that is outside said holding members.
 25. The methodof making semiconductor devices as defined in claim 17,wherein an edgeportion of said heat spreading member is disposed inside said cuttingline for said reinforcing member; and wherein in the step of cuttingsaid reinforcing member, both sides of said reinforcing member areclamped by a pair of holding members at the position that is outsidesaid heat spreading member and inside said cutting line for saidreinforcing member, enabling the shear force to be applied to saidreinforcing member to be cut at the position that is outside saidholding members.
 26. The method of making semiconductor devices asdefined in claim 16,wherein an outline of said heat spreading member isapproximately aligned with an edge of said slot on the side of each ofsaid mounting regions, said heat spreading member being disposed insidea connecting portion in each of said mounting regions connecting withsaid supporting portion; and wherein in the step of cutting saidreinforcing member, both sides of said reinforcing member are clamped bya pair of holding members at the position that is outside said heatspreading member and inside a cutting line for said supporting portion,enabling the shear force to be applied to said supporting portion at theposition that is outside said holding members.
 27. The method of makingsemiconductor devices as defined in claim 17,wherein an outline of saidheat spreading member is approximately aligned with an edge of said sloton the side of each of said mounting regions, said heat spreading memberbeing disposed inside a connecting portion in each of said mountingregions connecting with said supporting portion; and wherein in the stepof cutting said reinforcing member, both sides of said reinforcingmember are clamped by a pair of holding members at the position that isoutside said heat spreading member and inside a cutting line for saidsupporting portion, enabling the shear force to be applied to saidsupporting portion at the position that is outside said holding members.28. The method of making semiconductor devices, as defined in claim16,wherein said heat spreading member is superposed on said reinforcingmember and has a planar configuration to cover said slot, each of saidmounting regions, and said supporting portion of said reinforcingmember; and wherein said heat spreading member is cut together with saidreinforcing member.
 29. The method of making semiconductor devices, asdefined in claim 17,wherein said heat spreading member is superposed onsaid reinforcing member and has a planar configuration to cover saidslot, each of said mounting regions, and said supporting portion of saidreinforcing member; and wherein said heat spreading member is cuttogether with said reinforcing member.
 30. The method of makingsemiconductor devices as defined in claim 28,wherein said heat spreadingmember and said reinforcing member are provided with convex and concaveportions to be engaged mutually.
 31. The method of making semiconductordevices as defined in claim 29,wherein said heat spreading member andsaid reinforcing member are provided with convex and concave portions tobe engaged mutually.
 32. A semiconductor device fabricated by using themethod as defined in claim
 1. 33. A semiconductor device fabricated byusing the method as defined in claim
 2. 34. A semiconductor devicefabricated by using the method as defined in claim
 3. 35. Asemiconductor device fabricated by using the method as defined in claim4.
 36. A circuit board on which is mounted the semiconductor device asdefined in claim
 32. 37. A circuit board on which is mounted thesemiconductor device as defined in claim
 33. 38. A circuit board onwhich is mounted the semiconductor device as defined in claim
 34. 39. Acircuit board on which is mounted the semiconductor device as defined inclaim
 35. 40. An electronic apparatus including the circuit board asdefined in claim
 36. 41. An electronic apparatus including the circuitboard as defined in claim
 37. 42. An electronic apparatus including thecircuit board as defined in claim
 38. 43. An electronic apparatusincluding the circuit board as defined in claim 39.